MAX5062DASA-T Maxim Integrated Products, MAX5062DASA-T Datasheet - Page 8

• Manufacturer Part Number: MAX5062DASA-T
• Description: MOSFET & Power Driver ICs 125V 2A Half-Bridge MOSFET Driver
• Manufacturer: Maxim Integrated Products
• Type: High Side/Low Sider

Specifications of MAX5062DASA-T

• Rise Time: 65 ns
• Fall Time: 65 ns
• Supply Voltage (min): 8 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 1538.5 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
8
_______________________________________________________________________________________
PIN
PIN
—
10
11
12
—
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
NAME
NAME
AGND
IN_H+
PGND
IN_L+
IN_H
GND
IN_H-
IN_L
IN_L-
V
BST
BBM
DH
BST
V
HS
DL
EP
DH
HS
DL
EP
DD
DD
Power Input. Bypass to GND with a parallel combination of 0.1µF and 1µF ceramic capacitor.
Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
High-Side Noninverting Logic Input
Low-Side Noninverting Logic Input (MAX5062A/C, MAX5063A/C). Low-side inverting logic input
(MAX5062B/D, MAX5063B/D).
Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.
Low-Side-Gate Driver Output. Drives low-side MOSFET gate.
Exposed Pad. Internally connected to GND. Externally connect the exposed pad to a large ground
plane to aid in heat dissipation (MAX5062C/D, MAX5063C/D only).
Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
High-Side-Gate Driver Output. Drives high-side MOSFET gate.
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
Analog Ground. Return path for low-switching current signals. IN_H/IN_L inputs referenced to
Break-Before-Make Programming Resistor Connection. Connect a 10kΩ to 100kΩ resistor from BBM
to AGND to program the break-before-make time (t
greater than 200kΩ disables the BBM function and makes t
1nF capacitor to AGND.
High-Side Inverting CMOS (V
AGND when not used.
High-Side Noninverting CMOS (V
V
Low-Side Inverting CMOS (V
when not used.
Low-Side Noninverting CMOS (V
V
Power Ground. Return path for high-switching current signals. Use PGND as a return path for the
low-side driver.
Low-Side-Gate Driver Output. Drives the low-side MOSFET gate.
Power Input. Bypass to PGND with a 0.1µF ceramic in parallel with a 1µF ceramic capacitor.
Exposed Pad. Internally connected to AGND. Externally connect to a large ground plane to aid in
heat dissipation.
DD
DD
when not used.
when not used.
DD
DD
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to AGND
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
DD
DD
MAX5062/MAX5063 Pin Description
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
/ 2) (MAX5064A), or TTL (MAX5064B) Logic Input. Connect to
FUNCTION
FUNCTION
BBM
MAX5064 Pin Description
) from 16ns to 95ns. Resistance values
BBM
= 1ns. Bypass this pin with at least a