PMD9010D T/R NXP Semiconductors, PMD9010D T/R Datasheet

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PMD9010D T/R

Manufacturer Part Number
PMD9010D T/R
Description
MOSFET & Power Driver ICs MOSFET DRIVER TAPE 7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMD9010D T/R

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PMD9010D,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Two NPN transistors and high-speed switching diode connected in totem pole
configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
package.
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
Per transistor
V
I
I
Diode (D1)
I
V
C
CM
F
CEO
F
PMD9010D
MOSFET driver
Rev. 01 — 20 November 2006
Two general-purpose transistors and one high-speed switching diode as driver
Totem pole configuration
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
MOSFET driver
Pulse test: t
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
forward current
forward voltage
p
300 s;
0.02.
Conditions
open base
single pulse;
t
I
p
F
= 200 mA
1 ms
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Product data sheet
Max
45
0.1
0.2
0.2
1.1
Unit
V
A
A
A
V

Related parts for PMD9010D T/R

PMD9010D T/R Summary of contents

Page 1

PMD9010D MOSFET driver Rev. 01 — 20 November 2006 1. Product profile 1.1 General description Two NPN transistors and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PMD9010D 4. Marking Table 4. Type number PMD9010D 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Transistor 1 (TR1) V CBO V CEO V EBO PMD9010D_1 Product data sheet Pinning ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Transistor 2 (TR2) V CBO V CEO tot Diode (D1 FRM I FSM Device amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig 1. TR2: Power derating curves 6. Thermal characteristics Table 6. Symbol Transistor 2 (TR2) R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 5

... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0.33 0 0.1 0.05 0.02 0. FR4 PCB, standard footprint Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = Z 1 th(j-a) (K/W) 0.75 0.5 0.33 ...

Page 6

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 0. Ceramic PCB standard footprint 2 3 Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD9010D_1 Product data sheet - Rev. 01 — 20 November 2006 ...

Page 7

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Transistor 1 (TR1) I CBO I CEO I EBO CEsat V BEsat V BE Transistor 2 (TR2) I CBO V CEsat V BEsat V BE Diode (D1 TR2 and Device off [1] Pulse test: t PMD9010D_1 Product data sheet Characteristics Conditions collector-base cut-off current ...

Page 8

... NXP Semiconductors 500 ( 400 (2) 300 200 (3) 100 ( 100 C amb ( amb ( amb Fig 5. TR1: DC current gain as a function of collector current; typical values 1 (V) 1.0 0.8 0.6 0 amb ( amb ( 100 C amb Fig 7. TR1: Base-emitter voltage as a function of collector current; typical values PMD9010D_1 ...

Page 9

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 9. TR1: Collector-emitter saturation voltage as a function of collector current; typical values PMD9010D_1 Product data sheet 006aaa927 1 V CEsat ( (mA amb ( ( ( Fig 10. TR1: Collector-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 20 November 2006 ...

Page 10

... NXP Semiconductors 500 h FE 400 (2) 300 (3) (4) (5) (1) 200 100 ( amb ( amb ( 100 C amb ( 125 C amb ( 150 C amb Fig 11. TR2 and D1: DC current gain as a function of collector current; typical values 1 (V) 1.0 0.8 0.6 0 amb ( amb ( 100 C amb Fig 13. TR2: Base-emitter voltage as a function of collector current ...

Page 11

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 15. TR2: Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information Fig 17. Test circuit for switching times PMD9010D_1 Product data sheet 006aaa933 V CEsat ( (mA) C (1) I (2) I (3) I Fig 16. TR2: Collector-emitter saturation voltage as a ...

Page 12

... NXP Semiconductors 9. Package outline Fig 18. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMD9010D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 13

... NXP Semiconductors 11. Soldering Fig 19. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 20. Wave soldering footprint SOT457 (SC-74) PMD9010D_1 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 01 — 20 November 2006 ...

Page 14

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PMD9010D_1 20061120 PMD9010D_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 20 November 2006 PMD9010D MOSFET driver Supersedes - © NXP B.V. 2006. All rights reserved ...

Page 15

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 16

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 Revision history ...

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