1ED020I12-FA Infineon Technologies, 1ED020I12-FA Datasheet - Page 9

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1ED020I12-FA

Manufacturer Part Number
1ED020I12-FA
Description
MOSFET & Power Driver ICs SNGL IGBT Driver IC
Manufacturer
Infineon Technologies
Datasheet

Specifications of 1ED020I12-FA

Product
Driver ICs - Various
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1ED020I12-FA
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
EICEDRIVER®
1ED020I12FA
DESAT (Desaturation)
Monitoring of the IGBT saturation voltage (V
) to detect
CE
desaturation caused by short circuits. If OUT is high, V
is
CE
above a defined value and a certain blanking time has
expired, the desaturation protection is activated and the
IGBT is switched off. The blanking time is adjustable by an
external capacitor.
CLAMP (Clamping)
Ties the gate voltage to VEE2 after the IGBT has been
switched off at a defined voltage to avoid a parasitic switch-
on of the IGBT.During turn-off, the gate voltage is
monitored and the clamp output is activated when the gate
voltage goes below 2V (related to VEE2).
GND2
Reference ground of the output chip.
OUT (Driver output)
Output pin to drive an IGBT. The voltage is switched
between VEE2 and VCC2. In normal operating mode Vout
is controlled by IN+, IN- and /RST. During error mode
(UVLO, internal error or DESAT) Vout is set to VEE2
independent of the input control signals.
VCC2
Positive power supply pin of the output side.
Datasheet
9
Version 2.1, 2009-11-24

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