ZXMN2088DE6TA Diodes Inc, ZXMN2088DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN2088DE6TA
• Description: MOSFET & Power Driver ICs 20V DUAL SOT23-6 20V VBR MOSFET
• Manufacturer: Diodes Inc

Specifications of ZXMN2088DE6TA

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical characteristics (at T
Parameter
Static
Drain-Source breakdown
voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate-Body leakage
Gate-Source threshold voltage
Static Drain-Source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate Charge
Total Gate charge
Gate-Source charge
Gate Drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
NOTES:
(†)
(‡)
Issue 2 – June 2008
© Diodes Incorporated 2008
(
*
)
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(‡)
(
(†) (‡)
*
)
(‡)
(
*
) (‡)
Symbol
V
I
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
= 25°C unless otherwise stated).
Min.
0.4
20
4
Typ.
12.7
0.41
0.56
0.75
112
137
165
279
4.6
3.2
6.2
3.8
6.6
1.6
52
29
2
0.200
0.240
0.310
Max.
0.95
100
100
1.0
1
ZXMN2088DE6
Unit
μA
nC
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
Ω
V
V
S
V
Conditions
I
V
V
V
I
V
V
V
V
V
f=1MHz
V
I
R
V
V
I
T
V
T
di/dt = 100A/µs
D
D
D
D
I
www.diodes.com
F
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DD
DS
GS
GS
= 250μA, V
= 250μA, V
= 1A
G
= 2.4A
=25°C, I
www.zetex.com
= 25°C,
= 1.24A
≈ 6.0Ω
= 3V, V
= 20V, V
=±8V, V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 10V, I
= 10V, V
= 10V,V
= 10V,
= 4.5V
=0V
S
GS
= 1.0A,
D
DS
GS
D
D
D
GS
GS
= 1.0A
GS
DS
=0V
= 1.0A
= 0.6A
= 0.3A
=0V
=4.5V
=0V
=0V
=0V
=V
GS