ZXMN2088DE6TA Diodes Inc, ZXMN2088DE6TA Datasheet

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ZXMN2088DE6TA

Manufacturer Part Number
ZXMN2088DE6TA
Description
MOSFET & Power Driver ICs 20V DUAL SOT23-6 20V VBR MOSFET
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN2088DE6TA

Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN2088DE6TA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ZXMN2088DE6
20V Dual SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
achievable with low gate drive.
Features
Applications
Ordering information
Device
ZXMN2088DE6TA
Device marking
2088
Issue 2 - June 2008
© Diodes Incorporated 2008
Low on-resistance
Low gate drive capability
SOT23-6 (dual) package
Power Management functions
Disconnect switches
Relay driving and load switching
V
(BR)DSS
20
0.200 @ V
0.240 @ V
0.310 @ V
R
Reel size
(inches)
DS
(on)
7
GS
GS
GS
= 4.5V
= 2.5V
= 1.8V
(Ω)
Tape width
(mm)
8
I
D
2.1
1.9
1.7
1
(A)
Quantity
per reel
3,000
G1
S2
G2
Pinout – top view
www.diodes.com
www.zetex.com
Part no.
D1
S1
D2

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ZXMN2088DE6TA Summary of contents

Page 1

... SOT23-6 (dual) package Applications • Power Management functions • Disconnect switches • Relay driving and load switching Ordering information Device Reel size (inches) ZXMN2088DE6TA 7 Device marking 2088 Issue 2 - June 2008 © Diodes Incorporated 2008 I (A) (Ω) D 2.1 = 4.5V 1.9 = 2.5V 1 ...

Page 2

... Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For device with one active die (e) For device with two active die running at equal power. Issue 2 – June 2008 © Diodes Incorporated 2008 (b) (d) = 4.5V; T =25°C A (b) (d) = 4.5V ...

Page 3

... D=0.5 60 D=0 Single Pulse 0 100µ 1m 10m 100m Pulse Width (s) Transient Thermal Impedance Issue 2 – June 2008 © Diodes Incorporated 2008 1.2 1.0 0.8 0.6 1 Die Active (a)(d) 0.4 1ms 0.2 100µs 0 100 1 Die Active (a)(d) 10 D=0.1 D=0 ...

Page 4

... Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 2 – June 2008 © Diodes Incorporated 2008 = 25°C unless otherwise stated). amb Symbol Min. Typ. ...

Page 5

... T = 150°C 0.1 0.01 1E-3 0.4 0.6 V Gate-Source Voltage (V) GS Typical Transfer Characteristics 25°C 0.1 0 Drain Current (A) D On-Resistance v Drain Current Issue 2 – June 2008 © Diodes Incorporated 2008 4. 150°C 2. 0.01 10 0.1 V 1.6 1.4 1.2 1.0 0.8 0 25°C ...

Page 6

... C 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Issue 2 – June 2008 © Diodes Incorporated 2008 ISS f = 1MHz OSS C RSS Gate-Source Voltage v Gate Charge 6 ZXMN2088DE6 V = 10V Charge (nC) www.zetex.com www.diodes.com ...

Page 7

... Packaging details – SOT236 Issue 2 – June 2008 © Diodes Incorporated 2008 ZXMN2088DE6 7 www.zetex.com www.diodes.com ...

Page 8

... Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. ...

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