DG419DY-T1-E3/BKN Siliconix / Vishay, DG419DY-T1-E3/BKN Datasheet - Page 5

• Manufacturer Part Number: DG419DY-T1-E3/BKN
• Description: Switch; SOIC8 Precision Analog CMOS
• Manufacturer: Siliconix / Vishay

Specifications of DG419DY-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
- 10
- 20
- 30
30
20
10
50
40
30
20
10
0
0
- 20
- 15
I
V+ = 15 V
V- = - 15 V
V
D
L
Leakage Currents vs. Analog Voltage
- 15
= - 10 mA
R
= 5 V
- 10
DS(on)
V
D
DG417/418: I
DG419: I
- 10
or V
vs. V
S
V
- 5
D
- Drain or Source Voltage (V)
- 5
- Drain Voltage (V)
S(off)
D
and Supply Voltage
D(of f)
DG417/418: I
DG419: I
0
0
, I
S( of f)
5
D(off)
± 5 V
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D(on)
, I
10
± 8 V
Input Switching Threshold vs. Supply Voltages
D(on)
5
± 10 V
10
± 12 V
± 20 V
1 5
± 15 V
10
20
15
15
20
(V+)
25
V
L
200
150
100
- 50
= 5 V
50
40
30
20
10
30
V
0
0
L
- 15
- 15
= 7 V
35
V+ = 16.5 V
V- = - 16.5 V
V
V
DG417, DG418, DG419
L
IN
= 5 V
- 10
= 0 V
- 10
40
R
Drain Charge Injection
DS(on)
V
- 5
- 5
V
S
D
- Source Voltage (V)
- Drain Voltage (V)
T
A
vs. Temperature
= 125 °C
0
0
Vishay Siliconix
25 °C
C
5
5
- 55 °C
L
100 pF
= 10 nF
1 nF
www.vishay.com
500 pF
10
10
15
15
5