DG419DY-T1-E3 Vishay, DG419DY-T1-E3 Datasheet

Analog Switch ICs Single SPDT 22/25V

DG419DY-T1-E3

Manufacturer Part Number
DG419DY-T1-E3
Description
Analog Switch ICs Single SPDT 22/25V
Manufacturer
Vishay
Type
Analog Switchr
Datasheets

Specifications of DG419DY-T1-E3

Number Of Switches
Single
Switch Configuration
SPDT
On Resistance (max)
40 Ohms (Typ) @ 10.8 V
On Time (max)
110 ns (Typ) @ 12 V
Off Time (max)
40 ns (Typ) @ 12 V
Supply Voltage (max)
25 V
Supply Current
0.000001 mA
Maximum Power Dissipation
400 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 40 C
Propagation Delay Time
175 ns
Analog Switch Type
SPDT
No. Of Channels
1
On State Resistance Max
20ohm
Turn Off Time
40ns
Turn On Time
110ns
Supply Voltage Range
± 15V
Operating Temperature Range
-40°C To +85°C
Multiplexer Configuration
Single SPDT
Number Of Inputs
1
Number Of Outputs
2
Number Of Channels
1
Analog Switch On Resistance
45@±13.5VOhm
Package Type
SOIC N
Power Supply Requirement
Single/Dual
Single Supply Voltage (min)
13V
Single Supply Voltage (typ)
15/18/24/28V
Single Supply Voltage (max)
36V
Dual Supply Voltage (min)
±7V
Dual Supply Voltage (typ)
±9/±12/±15/±18V
Dual Supply Voltage (max)
±22V
Power Dissipation
400mW
Mounting
Surface Mount
Pin Count
8
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG419DY-T1-E3
Manufacturer:
SAMSUNG
Quantity:
2 854
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DG419DY-T1-E3
Manufacturer:
SIL
Quantity:
1 025
Part Number:
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Manufacturer:
VISHAY
Quantity:
150
Part Number:
DG419DY-T1-E3
Manufacturer:
VISHAY
Quantity:
24 884
DESCRIPTION
The DG417, DG418, DG419 monolithic CMOS analog
switches were designed to provide high performance
switching of analog signals. Combining low power, low
leakages, high speed, low on-resistance and small physical
size, the DG417 series is ideally suited for portable and
battery powered industrial and military applications requiring
high performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
high voltage silicon gate (HVSG) process. Break-before-
make is guaranteed for the DG419, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
GND
GND
V+
NC
S
V+
D
1
S
Dual-In-Line and SOIC
Dual-In-Line and SOIC
1
2
3
4
1
2
3
4
Top View
DG419
Top View
DG417
Precision CMOS Analog Switches
8
7
6
5
8
7
6
5
S
V-
IN
V
D
V-
IN
V
2
L
L
FEATURES
BENEFITS
APPLICATIONS
Logic "0" 0.8 V
Logic "1" 2.4 V
Logic "0" 0.8 V
Logic "1" 2.4 V
• ± 15 V analog signal range
• On-resistance - R
• Fast switching action - t
• Ultra low power requirements - P
• TTL and CMOS compatible
• MiniDIP and SOIC packaging
• Wide dynamic range
• Low signal errors and distortion
• Break-before-make switching action
• Simple interfacing
• Reduced board space
• Improved reliability
• Precision test equipment
• Precision instrumentation
• Battery powered systems
• Sample-and-hold circuits
• Military radios
• Guidance and control systems
• Hard disk drives
TRUTH TABLE
TRUTH TABLE DG419
44 V supply max. rating
44 V supply max. rating
Compliant to RoHS directive 2002/95/EC
Logic
Logic
0
1
0
1
DG417, DG418, DG419
DS(on)
DG417
: 20 
ON
SW
OFF
OFF
ON
ON
: 100 ns
1
Vishay Siliconix
D
: 35 nW
www.vishay.com
DG418
OFF
SW
OFF
ON
ON
2
1

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DG419DY-T1-E3 Summary of contents

Page 1

... To achieve high-voltage ratings and superior switching performance, the DG417 series is built on Vishay Siliconix’s high voltage silicon gate (HVSG) process. Break-before- make is guaranteed for the DG419, which is an SPDT configuration ...

Page 2

... DG417DJ-E3 DG418DJ DG418DJ-E3 DG417DY DG417DY-E3 DG417DY-T1 DG417DY-T1-E3 DG418DY DG418DY-E3 DG418DY-T1 DG418DY-T1-E3 DG419DJ DG419DJ-E3 DG419DY DG419DY-E3 DG419DY-T1 DG419DY-T1-E3 Limit 44 25 (GND - 0.3) to (V+) + 0 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 400 400 600 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 Unit ...

Page 3

... Room L L DG419 ± ± Full = 300  DG419 Room ±  nF Room L gen gen DG417, DG418, DG419 Vishay Siliconix Suffix D Suffix - 55 °C to 125 ° ° ° Typ. Min. Max. Min 0.1 - 0.25 0. 0.1 - 0.25 0. 0.1 - 0.75 ...

Page 4

... DG417, DG418, DG419 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Dynamic Characteristics Source Off C S(off) Capacitance C Drain Off Capacitance D(off) Channel On C D(on) Capacitance Power Supplies Positive Supply Current I+ Negative Supply I- Current I Logic Supply Current L I Ground Current GND a SPECIFICATIONS for Unipolar Supplies ...

Page 5

... S10-1528-Rev. G, 19-Jul-10 ± ± ± ± ± ± D(on D(off) D(on 3.5 3.0 2.5 2.0 1.5 V 1.0 0 (V+) Input Switching Threshold vs. Supply Voltages DG417, DG418, DG419 Vishay Siliconix 125 ° ° ° Drain Voltage ( vs. Temperature DS(on) 200 150 100 100 pF ...

Page 6

... DG417, DG418, DG419 Vishay Siliconix TYPICAL CHARACTERISTICS 2 120 Pulse L IN 100 Temperature (°C) Switching Time vs. Temperature ± 10 ± 11 ± 12 ± 13 Supply V oltage (V) Switching Time vs. Supply Voltages D-Cycle 100 µA I µA 1 µA 100 nA 100 Frequency (Hz) Power Supply Currents vs. Switching Frequency www.vishay.com 6 5 °C, unless otherwise noted ...

Page 7

... 300  Switch Output C (includes fixture and stray capacitance) L Figure 3. Break-Before-Make (DG419) Logic Input 300  Switch Output Figure 4. Transition Time (DG419) DG417, DG418, DG419 Vishay Siliconix Logic input waveform is inverted for switches that have the opposite logic sense TRANS TRANS ...

Page 8

... DG417, DG418, DG419 Vishay Siliconix TEST CIRCUITS + GND -  0.8 V GND X Isolation = 20 log bypass Figure 6. Crosstalk (DG419 www.vishay.com Figure 5. Charge Injection +   2.4 V GND Figure 8. Insertion Loss OFF   2.4 V GND Off Isolation = 20 log Figure 7. Off Isolation Document Number: 70051 S10-1528-Rev. G, 19-Jul-10  ...

Page 9

... Loading of the signal source is imperceptible. The DG419’s on-resistance is a low 100  for input signal 0.01 µ DG419 L1 10 k GND V- DG417, DG418, DG419 Vishay Siliconix HP4192A HP4192A Impedance Impedance Analyzer Analyzer or Equivalent or Equivalent ...

Page 10

... Figure 12. Programmable Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70051. ...

Page 11

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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