SUM110P04-04L-E3 Siliconix / Vishay, SUM110P04-04L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110P04-04L-E3
• Description: P-Channel 40-V (D-S) 175 DEG.C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUM110P04-04L-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
www.vishay.com
4
1000
100
2.0
1.7
1.4
1.1
0.8
0.5
0.1
10
0.0001
1
-
50
On-Resistance vs. Junction Temperature
V
I
-
D
I
GS
25
AV
= 30 A
0.001
(A) at T
= 10 V
T
Avalanche Current vs. Time
0
J
-
A
25
Junction Temperature (°C)
= 150 °C
0.01
50
t
in
I
AV
(Sec)
75
(A) at T
0.1
100
A
= 25 °C
125
1
150
175
10
100
10
48
46
44
42
40
38
1
-
0.0
50
-
Source-Drain Diode Forward Voltage
25
I
D
= 250 µA
Drain Source Breakdown vs.
V
T
0
T
SD
0.3
J
J
Junction Temperature
= 150 °C
-
-
25
Junction Temperature (°C)
Source-to-Drain Voltage (V)
50
0.6
S-61964-Rev. C, 09-Oct-06
Document Number: 72437
75
100
T
J
0.9
= 25 °C
125
150
175
1.2