SUM110P04-04L-E3 Siliconix / Vishay, SUM110P04-04L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110P04-04L-E3
• Description: P-Channel 40-V (D-S) 175 DEG.C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUM110P04-04L-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 72437
S-61964-Rev. C, 09-Oct-06
14000
12000
10000
8000
6000
4000
2000
240
200
160
120
240
200
160
120
80
40
80
40
0
0
0
0
0
0
5
15
C
V
V
2
oss
DS
10
V
DS
GS
Output Characteristics
-
Transconductance
-
= 10 thru 5 V
I
30
Drain-to-Source Voltage (V)
D
Drain-to-Source Voltage (V)
15
-
Capacitance
Drain Current (A)
4
20
45
25
6
C
rss
60
C
iss
T
30
C
=
8
-
75
55 °C
125 °C
35
4 V
3 V
25 °C
40
90
10
0.010
0.008
0.006
0.004
0.002
0.000
200
175
150
125
100
75
50
25
20
16
12
0
8
4
0
0.0
0
0
V
V
I
0.5
D
GS
50
DS
= 110 A
20
On-Resistance vs. Drain Current
= 4.5 V
= 20 V
V
1.0
100
GS
Transfer Characteristics
Q
g
-
I
D
1.5
150
40
-
Gate-to-Source Voltage (V)
SUM110P04-04L
-
Total Gate Charge (nC)
Gate Charge
Drain Current (A)
2.0
200
T
25 °C
60
C
Vishay Siliconix
= 125 °C
2.5
250
300
3.0
80
V
www.vishay.com
GS
3.5
350
= 10 V
100
-
55 °C
400
4.0
120
4.5
450
3