SI7860DP-T1-E3/BKN Siliconix / Vishay, SI7860DP-T1-E3/BKN Datasheet - Page 3

• Manufacturer Part Number: SI7860DP-T1-E3/BKN
• Description: N-CHANNEL 30V MOSFET, 8MOHM @ 10V
• Manufacturer: Siliconix / Vishay

Specifications of SI7860DP-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
0.015
0.012
0.009
0.006
0.003
0.000
60
10
6
5
4
3
2
1
0
1
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 16 A
0.2
10
= 15 V
4
V
Q
T
SD
g
J
- Total Gate Charge (nC)
= 150 °C
-
0.4
V
Source-to-Drain Voltage (V)
I
Gate Charge
GS
D
- Drain Current (A)
20
8
= 4.5 V
0.6
12
30
0.8
V
GS
T
J
16
40
= 10 V
= 25 °C
1.0
1.2
20
50
0.040
0.032
0.024
0.016
0.008
0.000
2500
2000
1500
1000
2.00
1.75
1.50
1.25
1.00
0.75
0.50
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 16 A
rss
V
= 10 V
2
6
V
GS
T
DS
J
0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
25
Capacitance
12
oss
4
50
Vishay Siliconix
C
iss
18
6
75
Si7860DP
I
D
= 16 A
100
www.vishay.com
24
8
125
150
10
30
3