SI7860DP-T1-E3/BKN Siliconix / Vishay, SI7860DP-T1-E3/BKN Datasheet

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... Bottom View Ordering Information: Si7860DP-T1 Si7860DP-T1-E3 (Lead (Pb)-free) Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Continuous) Avalanche Current Single Pulse Avalanche Energy a Maximum Power Dissipation ...

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... Si7860DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 2500 2000 1500 1000 2.00 1.75 1.50 1.25 1.00 0.75 0. 0.040 0.032 0.024 0.016 °C J 0.008 0.000 0.8 1.0 1.2 Si7860DP Vishay Siliconix C iss C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature ...

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... Si7860DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.0 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...