SI3552DV-T1-E3 Siliconix / Vishay, SI3552DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6
• Manufacturer: Siliconix / Vishay

Specifications of SI3552DV-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
V
8
6
4
2
0
GS
0
0
= 10 thru 7 V
0.01
0.1
V
2
1
GS
10
1
On-Resistance vs. Drain Current
= 4.5 V
-4
1
V
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
DS
Output Characteristics
2
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Single Pulse
2
3
2 V
4
10
3
V
GS
-3
6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
= 10 V
5
4
5 V
4 V
3 V
6
5
7
Square Wave Pulse Duration (sec)
10
-2
300
240
180
120
10
60
8
6
4
2
0
0
-1
0
0
C
rss
1
V
V
6
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
2
Capacitance
12
Vishay Siliconix
1
C
iss
T
3
C
= - 55_C
25_C
18
Si3552DV
NCHANNEL
PCHANNEL
4
www.vishay.com
24
5
125_C
10
30
6
5