SI3552DV-T1-E3 Siliconix / Vishay, SI3552DV-T1-E3 Datasheet - Page 5
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SI3552DV-T1-E3
Manufacturer Part Number
SI3552DV-T1-E3
Description
MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6
Manufacturer
Siliconix / Vishay
Datasheet
1.SI3552DV-T1-E3.pdf
(8 pages)
Specifications of SI3552DV-T1-E3
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3552DV-T1-E3
Manufacturer:
VIS
Quantity:
20 000
Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
V
8
6
4
2
0
GS
0
0
= 10 thru 7 V
0.01
0.1
V
2
1
GS
10
1
On-Resistance vs. Drain Current
= 4.5 V
-4
1
V
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
DS
Output Characteristics
2
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Single Pulse
2
3
2 V
4
10
3
V
GS
-3
6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
= 10 V
5
4
5 V
4 V
3 V
6
5
7
Square Wave Pulse Duration (sec)
10
-2
300
240
180
120
10
60
8
6
4
2
0
0
-1
0
0
C
rss
1
V
V
6
DS
GS
Transfer Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
2
Capacitance
12
Vishay Siliconix
1
C
iss
T
3
C
= - 55_C
25_C
18
Si3552DV
NCHANNEL
PCHANNEL
4
www.vishay.com
24
5
125_C
10
30
6
5