SI3552DV-T1-E3 Siliconix / Vishay, SI3552DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3552DV-T1-E3
• Description: MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6
• Manufacturer: Siliconix / Vishay

Specifications of SI3552DV-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 70971
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 1.8 A
1
On-Resistance vs. Drain Current
V
= 15 V
GS
1
V
DS
Q
= 4.5 V
1
Output Characteristics
g
2
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
V
2
GS
2V
3
= 10 thru 5 V
2
4
3
V
GS
5
4 V
3 V
3
= 10 V
4
6
5
7
4
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
50
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 2.5 A
1
5
V
V
= 10 V
DS
GS
T
C
Transfer Characteristics
J
0
oss
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
2
Capacitance
25
C
iss
Vishay Siliconix
50
15
3
T
25_C
C
= - 55_C
75
Si3552DV
NCHANNEL
20
4
100
www.vishay.com
125_C
25
5
125
150
30
6
3