SI5513DC-T1-E3/BKN Siliconix / Vishay, SI5513DC-T1-E3/BKN Datasheet - Page 5

• Manufacturer Part Number: SI5513DC-T1-E3/BKN
• Description: MOSFET; 20V N & P CH (D-S) Complementary
• Manufacturer: Siliconix / Vishay

Specifications of SI5513DC-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 71186
S-42138—Rev. F, 15-Nov-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0.0
0.1
0
2
1
10
V
GS
−4
V
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.5
= 5 thru 4 V
GS
On-Resistance vs. Drain Current
V
2
Single Pulse
= 2.5 V
DS
Output Characteristics
− Drain-to-Source Voltage (V)
I
1.0
D
− Drain Current (A)
4
1.5
10
V
GS
−3
6
= 3.6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
2.0
3.5 V
2.5 V
1.5 V
V
3 V
2 V
GS
8
= 4.5 V
2.5
Square Wave Pulse Duration (sec)
3.0
10
10
−2
10
−1
600
500
400
300
200
100
10
0
8
6
4
2
0
0.0
0
C
rss
0.5
4
V
GS
1.0
V
Transfer Characteristics
C
DS
C
oss
− Gate-to-Source Voltage (V)
iss
− Drain-to-Source Voltage (V)
1
1.5
Capacitance
8
Vishay Siliconix
2.0
25_C
T
C
12
= −55_C
2.5
Si5513DC
N−CHANNEL
P−CHANNEL
3.0
www.vishay.com
16
125_C
10
3.5
4.0
20
5