SI5513DC-T1-E3/BKN Siliconix / Vishay, SI5513DC-T1-E3/BKN Datasheet - Page 4

• Manufacturer Part Number: SI5513DC-T1-E3/BKN
• Description: MOSFET; 20V N & P CH (D-S) Complementary
• Manufacturer: Siliconix / Vishay

Specifications of SI5513DC-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

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4
Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
0.4
0.2
10
0.01
1
0.1
−50
0.0
2
1
10
−4
Source-Drain Diode Forward Voltage
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
0
Single Pulse
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
− Temperature (_C)
J
25
10
= 150_C
−3
0.6
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.8
10
100
T
−2
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
−1
1
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
10
0
−4
On-Resistance vs. Gate-to-Source Voltage
10
−3
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
V
P
10
GS
DM
Single Pulse Power
JM
−2
− Gate-to-Source Voltage (V)
− T
t
A
Time (sec)
1
10
2
= P
t
−1
2
DM
Z
thJA
thJA
100
t
t
S-42138—Rev. F, 15-Nov-04
1
2
1
(t)
I
3
Document Number: 71186
D
= 90_C/W
= 3.1 A
N−CHANNEL
10
4
600
100
600
5
1000