DF10M-E3/45 General Semiconductor / Vishay, DF10M-E3/45 Datasheet - Page 3
DF10M-E3/45
Manufacturer Part Number
DF10M-E3/45
Description
Rectifier, Miniature Glass Passivated Single-Phase; 1000 V; 1; PCB Mount
Manufacturer
General Semiconductor / Vishay
Datasheet
1.DF04M-E345.pdf
(3 pages)
Specifications of DF10M-E3/45
Capacitance, Junction
25 pF
Configuration
Single Phase
Current Squared Time Rating
10
Current, Forward
1 A
Current, Reverse
500 μA
Current, Surge
50 A
Package Type
DFM
Primary Type
Bridge Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-50 to +150 °C
Voltage, Forward
1.1 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
0.130 (3.30)
0.120 (3.05)
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
100
100
3