DF10M-E3/45 General Semiconductor / Vishay, DF10M-E3/45 Datasheet
DF10M-E3/45
Specifications of DF10M-E3/45
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DF10M-E3/45 Summary of contents
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... V 50 100 200 RRM 140 RMS V 50 100 200 DC I F(AV) I FSM STG DF005M thru DF10M Vishay General Semiconductor DF04M DF06M DF08M DF10M DF04 DF06 DF08 DF10 400 600 800 1000 280 420 560 700 400 600 800 1000 1 150 UNIT ...
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... DF005M thru DF10M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous forward 1.0 A voltage drop per diode Maximum reverse current °C A rated DC blocking T = 125 °C A voltage per diode Typical junction 4 MHz capacitance per diode THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" ...
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... DF005M thru DF10M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 10 100 Reverse Voltage (V) 0.1 ...