IRFR220PBF Vishay PCS, IRFR220PBF Datasheet

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IRFR220PBF

Manufacturer Part Number
IRFR220PBF
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ohm; ID 4.8A; TO-252AA; PD 42W; VGS +/-20V
Manufacturer
Vishay PCS
Datasheet

Specifications of IRFR220PBF

Current, Drain
4.8 A
Gate Charge, Total
14 nC
Package Type
TO-252AA
Polarization
N-Channel
Power Dissipation
42 W
Resistance, Drain To Source On
0.8 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
19 ns
Time, Turn-on Delay
7.2 ns
Transconductance, Forward
1.7 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR220PBF
Manufacturer:
Maxim
Quantity:
29
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
(TO-252)
SD
D
DD
(Max.) (nC)
DPAK
(nC)
(nC)
(V)
≤ 5.2 A, dI/dt ≤ 95 A/µs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
DPAK (TO-252)
IRFR220PbF
SiHFR220-E3
IRFR220
SiHFR220
= 25 °C, L = 14 mH, R
G
c
D S
a
a
DD
b
V
≤ V
GS
e
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
200
3.0
7.9
14
G
DPAK (TO-252)
IRFR220TRLPbF
SiHFR220TL-E3
IRFR220TRL
SiHFR220TL
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
IRFR220, IRFU220, SiHFR220, SiHFU220
0.80
GS
AS
at 10 V
= 4.8 A (see fig. 12).
a
a
T
T
C
A
for 10 s
a
a
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRFR220TRPbF
SiHFR220T-E3
IRFR220TR
SiHFR220T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR220, SiHFR220)
• Straight Lead (IRFU220, SiHFU220)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
DPAK (TO-252)
IRFR220TRRPbF
SiHFR220TR-E3
IRFR220TRR
SiHFR220TR
design,
- 55 to + 150
a
a
LIMIT
0.020
260
± 20
0.33
200
230
4.8
3.0
4.8
4.2
2.5
5.0
19
42
low
a
a
Vishay Siliconix
d
on-resistance
IPAK (TO-251)
IRFU220PbF
SiHFU220-E3
IRFU220
SiHFU220
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFR220PBF Summary of contents

Page 1

... Configuration DPAK IPAK (TO-252) (TO-251 ORDERING INFORMATION Package DPAK (TO-252) IRFR220PbF Lead (Pb)-free SiHFR220-E3 IRFR220 SnPb SiHFR220 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...

Page 2

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted ...

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