NTE159-10 NTE Electronics, Inc., NTE159-10 Datasheet - Page 3

• Manufacturer Part Number: NTE159-10
• Description: Transistor; PNP; Silicon; 80 V; 80 V; 5 V; 1 A; 625 mW; -55 to 150 degC; 200 d
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE159-10

• Complement To: NPN
• Current, Collector Cutoff: 50 nA (Max.)
• Current, Continuous Collector: 1 A
• Current, Gain: 40 – 200 @ VCE == 5V, IC == 0.5A
• Material Type: Silicon
• Power Dissipation: 625 mW
• Resistance, Thermal, Junction To Case: 83.3 °C⁄W
• Temperature Range, Junction, Operating: -55 to 150 °C
• Thermal Resistance, Junction To Ambient: 200 °C⁄W
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 80 V (Min.)
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.5 V (Max.) @ IC == 3A, IB == 0.3A

.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
.500
Max
Min
E B C
.050 (1.27)
.135 (3.45) Min
.105 (2.67) Max
(4.2)
.165
Max
Seating Plane
.021 (.445) Dia Max