DS1220AB-200+ Dallas Semiconductor, DS1220AB-200+ Datasheet - Page 3

• Manufacturer Part Number: DS1220AB-200+
• Description: RAM NV 16K-5% VTP 200NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1220AB-200+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 16K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 200 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from
Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High from WE
Output Active from WE
Data Setup Time
Data Hold Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
SYMBOL
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
OEW
t
t
WR1
WR2
t
ACC
COE
DH1
DH2
AW
WC
WP
CO
OD
OH
RC
OE
DS
DS1220AD-100
DS1220AB-100
MIN
100
100
75
10
40
10
4 of 10
5
5
0
0
5
0
MAX
100
100
50
35
35
(V
(V
CC
DS1220AD-120
DS1220AB-120
MIN
CC
120
120
90
10
50
10
=5.0V ± 10% for DS1220AD)
5
5
0
0
5
0
=5.0V ± 5% for DS1220AB)
MAX
120
120
60
35
35
(T
UNITS
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
:
See Note 10)
DS1220AB/AD
NOTES
12
13
12
13
5
5
3
5
4
4