SUP60N06-18-E3 Siliconix / Vishay, SUP60N06-18-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP60N06-18-E3
• Description: MOSFET; TO220 NCH MOS 60V .018R
• Manufacturer: Siliconix / Vishay

Specifications of SUP60N06-18-E3

• Channel Type: N
• Current, Drain: 60 A
• Fall Time: 30 ns
• Gate Charge, Total: 60 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 120 W
• Resistance, Drain To Source On: 0.018 Ohm
• Resistance, Thermal, Junction To Case: 1.25 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 30 ns
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 49 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Diode Forward: 1.6 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 70290
S–57253—Rev. D, 24-Feb-98
3000
2500
2000
1500
1000
100
500
75
50
25
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
V
V
2
V
DS
DS
GS
10
T
Output Characteristics
C
– Drain-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
= –55 C
Transconductance
V
Capacitance
C
GS
20
4
oss
= 10, 9, 8, 7 V
20
30
6
30
40
C
6 V
5 V
4 V
8
25 C
iss
125 C
10
50
40
0.020
0.016
0.012
0.008
0.004
100
80
60
40
20
10
0
0
8
6
4
2
0
0
0
0
V
I
D
GS
= 60 A
On-Resistance vs. Drain Current
= 10 V
V
20
V
T
2
GS
C
GS
10
Transfer Characteristics
25 C
Q
= 125 C
= 10 V
g
SUP/SUB60N06-18
– Gate-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
www.vishay.com FaxBack 408-970-5600
– Drain Current (A)
Gate Charge
40
4
Vishay Siliconix
20
60
–55 C
6
30
80
8
100
10
40
2-3