SUP60N06-18-E3 Siliconix / Vishay, SUP60N06-18-E3 Datasheet
SUP60N06-18-E3
Manufacturer Part Number
SUP60N06-18-E3
Description
MOSFET; TO220 NCH MOS 60V .018R
Manufacturer
Siliconix / Vishay
Datasheet
1.SUP60N06-18-E3.pdf
(5 pages)
Specifications of SUP60N06-18-E3
Channel Type
N
Current, Drain
60 A
Fall Time
30 ns
Gate Charge, Total
60 nC
Operating And Storage Temperature
–55 to +175 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
120 W
Resistance, Drain To Source On
0.018 Ohm
Resistance, Thermal, Junction To Case
1.25 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
40 °C/W
Time, Rise
30 ns
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
49 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Diode Forward
1.6 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SUP60N06-18-E3
Manufacturer:
FSC
Quantity:
5 000
Part Number:
SUP60N06-18-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Junction to Ambient
Junction-to-Ambient
Junction-to-Case
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
V
(BR)DSS
TO-220AB
SUP60N06-18
Top View
G D S
60
(V)
1%.
DRAIN connected to TAB
J
J
a
= 175 C)
= 175 C)
r
N-Channel 60-V (D-S), 175 C MOSFET
DS(on)
0.018
Parameter
Parameter
( )
T
C
= 25 C (TO-220AB and TO-263)
PCB Mount (TO-263)
Free Air (TO-220AB)
T
A
SUB60N06-18
= 25 C (TO-263)
Top View
G
T
TO-263
I
L = 0.1 mH
T
D
C
C
60
= 100 C
(A)
= 25 C
D
S
c
c
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
DS
GS
AR
hJA
D
D
D
D
stg
D
S
SUP/SUB60N06-18
www.vishay.com FaxBack 408-970-5600
–55 to 175
Vishay Siliconix
Limit
Limit
120
62.5
1.25
120
180
3.7
60
60
39
60
40
20
b
Unit
Unit
C/W
C/W
mJ
W
W
V
V
A
A
A
C
2-1
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SUP60N06-18-E3 Summary of contents
Page 1
... N-Channel 60-V (D-S), 175 C MOSFET V ( (BR)DSS DS(on) 60 0.018 TO-220AB DRAIN connected to TAB Top View SUP60N06-18 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175 C) = 175 Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
SUP/SUB60N06-18 Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage I Zero Gate Voltage Drain Current On-State Drain Current ...
Page 3
Output Characteristics 100 – Drain-to-Source Voltage (V) DS Transconductance – ...
Page 4
SUP/SUB60N06-18 Vishay Siliconix On-Resistance vs. Junction Temperature 2 2.0 1.6 1.2 0.8 0.4 0 –50 – 100 T – Junction Temperature ( C) J Maximum Avalanche ...
Page 5
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...