PIC16F887-E/P Microchip Technology Inc., PIC16F887-E/P Datasheet - Page 254
PIC16F887-E/P
Manufacturer Part Number
PIC16F887-E/P
Description
40 PIN, 14KB FLASH, 368 RAM, 36 I/O, PDIP
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC16F887-EP.pdf
(328 pages)
Specifications of PIC16F887-E/P
A/d Inputs
14-Channel, 10-Bit
Comparators
2
Cpu Speed
5 MIPS
Eeprom Memory
256 Bytes
Frequency
20 MHz
Input Output
35
Interface
I2C/SPI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
40-pin PDIP
Programmable Memory
14K Bytes
Ram Size
368 Bytes
Resistance, Drain To Source On
Bytes
Serial Interface
MSSP or EUSART
Speed
20 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC16F887-E/P
Manufacturer:
TI
Quantity:
12 000
Company:
Part Number:
PIC16F887-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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PIC16F882/883/884/886/887
17.5
DS41291E-page 252
DC CHARACTERISTICS
D100
D101*
D101A* C
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
Note 1:
Param
No.
2:
3:
4:
5:
*
†
I
COSC2
E
E
V
T
T
T
E
E
V
V
T
T
DC Characteristics:
ULP
DEW
RETD
REF
PEW
RETD
D
D
DRW
P
D
PR
PEW
Sym.
IO
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
Negative current is defined as current sourced by the pin.
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
See Section 10.3.1 “Using the Data EEPROM” for additional information.
Including OSC2 in CLKOUT mode.
Ultra Low-Power Wake-Up
Current
Capacitive Loading Specs on
Output Pins
OSC2 pin
All I/O pins
Data EEPROM Memory
Byte Endurance
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
V
Erase/Write cycle time
Characteristic Retention
DD
DD
DD
DD
for Read/Write
for Read
for Row Erase/Write
for Bulk Erase Operations
Characteristic
(4)
PIC16F883/884/886/887-I (Industrial)
PIC16F883/884/886/887-E (Extended) (Continued)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
Min.
V
V
V
10K
10K
1M
4.5
40
1K
40
—
—
—
—
—
MIN
MIN
MIN
Typ†
100K
100K
10M
10K
200
1M
—
—
—
—
—
—
—
—
5
2
Max.
5.5
5.5
5.5
5.5
2.5
15
50
—
—
—
—
—
—
—
—
-40°C ≤ T
-40°C ≤ T
6
Units
Year Provided no other specifications
Year Provided no other specifications
E/W -40°C ≤ T
E/W +85°C ≤ T
E/W -40°C ≤ T
E/W -40°C ≤ T
E/W +85°C ≤ T
nA
ms
ms
pF
pF
V
V
V
V
A
A
≤ +85°C for industrial
≤ +125°C for extended
© 2008 Microchip Technology Inc.
See Application Note AN879,
“Using the Microchip Ultra
Low-Power Wake-up Module”
(DS00879)
In XT, HS and LP modes when
external clock is used to drive
OSC1
Using EECON1 to read/write
V
voltage
are violated
V
voltage
are violated
MIN
MIN
= Minimum operating
= Minimum operating
A
A
A
Conditions
A
A
≤ +85°C
≤ +85°C
≤ +85°C
≤ +125°C
≤ +125°C
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