74HC00D,652 Philips Semiconductors, 74HC00D,652 Datasheet - Page 4

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74HC00D,652

Manufacturer Part Number
74HC00D,652
Description
NAND-GATE; SO-14; 5.0 V (TYP.); -40; +125; 500 MW (MAX.); 1.5 V (MIN.)
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC00D,652

Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Leakage, Input
±5.0 μA (Max.)
Current, Quiescent Supply
40 uA (Max.)
Current, Supply
40 μA
Function Type
2-Inputs
Logic Function
NAND Gate
Logic Type
CMOS
Number Of Circuits
Quad
Package Type
SO-14
Power Dissipation
500 mW (Max.)
Propagation Delay
7 ns
Special Features
Tri-State
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Voltage, Dc Input
1.5 V (Min.)
Voltage, Dc Output
1.9 V (Min.)
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
74HC00D,652
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
DC CHARACTERISTICS
Type 74HC00
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
T
V
V
V
V
I
I
I
LI
OZ
CC
SYMBOL
amb
IH
IL
OH
OL
Quad 2-input NAND gate
= 40 to +85 C; note 1
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input leakage current
3-state output OFF current V
quiescent supply current
PARAMETER
V
V
V
V
V
I
I
I
I
O
I
I
I
I
I
I
I
I
I
I
I
= V
= V
= V
= V
= V
O
O
O
O
O
O
O
O
O
O
= V
= 20 A
= 20 A
= 20 A
= 4.0 mA
= 5.2 mA
= 20 A
= 20 A
= 20 A
= 4.0 mA
= 5.2 mA
IH
IH
CC
IH
CC
CC
TEST CONDITIONS
OTHER
or V
or V
or V
or GND
or GND; I
or GND
IL
IL
IL
;
6
O
= 0 6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
V
CC
(V)
1.5
3.15
4.2
1.9
4.4
5.9
3.84
5.34
MIN.
74HC00; 74HCT00
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
TYP.
Product specification
0.5
1.35
1.8
0.1
0.1
0.1
0.33
0.33
20
1.0
.5.0
MAX.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
UNIT
A
A
A

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