NTE379 NTE Electronics, Inc., NTE379 Datasheet
NTE379
Manufacturer Part Number
NTE379
Description
Transistor; NPN; 700 V; 9 V; 12 A; 6 A; 100 W; 1.25 degC/W; 400 V (Min.); 6; 30
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Voltager
Datasheet
1.NTE379.pdf
(3 pages)
Specifications of NTE379
Current, Base
6 A
Current, Collector
12 A
Current, Collector Cutoff
1 mA (Max.)
Current, Emitter
36 A
Current, Gain
40
Frequency
4 MHz
Gain, Dc Current, Maximum
30
Gain, Dc Current, Minimum
6
Package Type
TO-220
Polarity
NPN
Power Dissipation
100 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.25 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-65 °C
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
9 V
Voltage, Saturation, Collector To Emitter
3 V (Max.)
Voltage, Sustaining, Collector To Emitter
400 V (Min.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers, and Deflection circuits.
Features:
D V
D Reverse Bias SOA with Inductive Loads @ T
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Emitter Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Lead Temperature (During Soldering, 1/8” from case for 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
CEO(sus)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above 25 C
Derate Above 25 C
= 400V
B
E
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
Power Amp, High Voltage, Switch
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO(sus)
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE379
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100 C
10%.
L
. . . . . . . . . . . . . . . . . . . . .
–65 to +150 C
–65 to +150 C
800mW/ C
16mW/ C
1.25 C/W
62.5 C/W
+275 C
100W
400V
700V
12A
24A
12A
18A
36A
2W
9V
6A
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NTE379 Summary of contents
Page 1
... Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance Switching Characteristics Resistive ...
Page 3
Max .147 (3.75) Dia Max .070 (1.78) Max Base .100 (2.54) .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Emitter Collector/Tab ...