NTE37 NTE Electronics, Inc., NTE37 Datasheet
NTE37
Manufacturer Part Number
NTE37
Description
Transistor; PNP; Silicon; TO3P; 160 V; 140 V; 6 V; 12 A; 100 W; 150 degC; NPN
Manufacturer
NTE Electronics, Inc.
Type
AF, Amplifier, High Currentr
Datasheet
1.NTE36.pdf
(2 pages)
Specifications of NTE37
Complement To
NPN
Current, Collector
12 A
Current, Collector Cutoff
0.1 mA
Current, Continuous Collector
12 A
Current, Gain
60 to 200
Frequency
15 MHz
Material Type
Silicon
Package Type
TO-3P
Polarity
PNP
Power Dissipation
100 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
140 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
140 V
Voltage, Collector To Emitter, Saturation
1.1 V
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
1.1 V
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
NTE36
NTE37
NTE36
NTE37
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AF Power Amplifier, High Current Switch
Silicon Complementary Transistors
EBO
CBO
C
= +25 C), P
CEO
NTE36 (NPN) & NTE37 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
V
A
CE(sat)
I
I
h
h
V
C
CEO
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
f
= +25 C unless otherwise specified)
BE
T
ob
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
V
V
V
V
V
V
V
I
C
CB
BE
CE
CE
CE
CB
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A, I
= 4V, I
= 80V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, f = 1MHz
= 5V, I
Test Conditions
B
C
= 500mA
C
C
C
C
E
= 0
= 1A
= 6A
= 1A
= 1A
= 0
Min
60
20
–
–
–
–
–
–
–
–
Typ
210
300
0.6
1.1
15
–
–
–
–
–
–40 to +150 C
Max
200
0.1
0.1
1.5
2.5
–
–
–
–
–
+150 C
MHz
Unit
mA
mA
100W
pF
V
V
140V
160V
12A
15A
6V
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NTE37 Summary of contents
Page 1
... Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de- signed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (T Collector–Emitter Voltage, V Collector–Base Voltage, V CBO Emitter– ...
Page 2
... Emitter–Base Breakdown Voltage Turn–On Time NTE36 NTE37 Fall Time NTE36 NTE37 Storage Time NTE36 NTE37 Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple- mentary pairs have their gain specification (h .190 (4.82) .787 (20.0) .591 (15.02) .787 (20.0) B NOTE: Either case style may be shipped depending on stock ...