X28HC64P-12 XICOR, X28HC64P-12 Datasheet

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X28HC64P-12

Manufacturer Part Number
X28HC64P-12
Description
EEPROM; 120 ns; 5 V; 15 mA (Typ); 5 ns; 10 pF; 10 pF; 2 V (Min.); -1 V (Min.)
Manufacturer
XICOR
Datasheet

Specifications of X28HC64P-12

Capacitance, Input
6, 10 pF
Capacitance, Output
10 pF
Current, Input, Leakage
±10 μA
Current, Operating
15 mA
Current, Output, Leakage
±10
Current, Supply
15 mA (Typ)
Data Retention
100 yrs.
Density
64K
Interface
Parallel Bus
Memory Type
EEPROM
Organization
8K×8
Package Type
PDIP
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
120 ns
Time, Address Hold
50
Time, Fall
5 ns
Time, Input Rise And Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
6 V
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
-1 V (Min.)
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
X28HC64P-12
Manufacturer:
XICOR
Quantity:
5 596
Part Number:
X28HC64P-12
Quantity:
5 510
Part Number:
X28HC64P-12
Manufacturer:
XICOR
Quantity:
20 000
5 Volt, Byte Alterable EEPROM
FEATURES
• 70ns access time
• Simple byte and page write
• Low power CMOS
• Fast write cycle times
• Software data protection
• End of write detection
PIN CONFIGURATIONS
V
A
I/O
I/O
I/O
NC
SS
12
A
A
A
A
A
A
A
A
—Single 5V supply
—No external high voltages or V
—Self-timed
—No erase before write
—No complex programming algorithms
—No overerase problem
—40mA active current max.
—200µA standby current max.
—64-byte page write operation
—Byte or page write cycle: 2ms typical
—Complete memory rewrite: 0.25 sec. typical
—Effective byte write cycle time: 32µs typical
—DATA polling
—Toggle bit
7
6
5
4
3
2
1
0
0
1
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Plastic DIP
Flat Pack
X28HC64
CERDIP
SOIC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
WE
NC
A
A
A
OE
A
CE
I/O
I/O
I/O
I/O
I/O
CC
8
9
11
10
7
6
5
4
3
®
1
I/O
NC
A
A
A
A
A
A
A
6
5
4
3
2
1
0
0
Data Sheet
5
6
7
8
9
10
11
12
13
PP
14 15 16 17 18 19 20
4
control circuits
3
(Top View)
X28HC64
2
PLCC
LCC
1 32 31 30
29
28
27
26
25
24
23
22
21
A
A
A
NC
OE
A
CE
I/O
I/O
8
9
11
10
7
6
• High reliability
• JEDEC approved byte-wide pin out
• Pb-free plus anneal available (RoHS compliant)
DESCRIPTION
The X28HC64 is an 8K x 8 EEPROM, fabricated with
Intersil’s proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable non-
volatile memories, the X28HC64 is a 5V only device. It
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs.
The X28HC64 supports a 64-byte page write operation,
effectively providing a 32µs/byte write cycle, and
enabling the entire memory to be typically written in 0.25
seconds. The X28HC64 also features DATA Polling and
Toggle Bit Polling, two methods providing early end of
write detection. In addition, the X28HC64 includes a
user-optional software data protection mode that further
enhances Intersil’s hardware write protect capability.
Intersil EEPROMs are designed and tested for appli-
cations requiring extended endurance. Inherent data
retention is greater than 100 years.
I/O 0
I/O 1
I/O 2
V SS
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
—Endurance: 1 million cycles
—Data retention: 100 years
A 10
NC
NC
CE
A 2
A 1
A 0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
12
11
9
7
5
4
I/O
I/O
A
A
A
A
1
3
5
6
1
0
13
10
8
6
2
3
I/O
A
A
A
A
A
Bottom View
0
2
4
12
7
X28HC64
2
(BOTTOM
X28HC64
TSOP
VIEW)
PGA
15
14
28
1
I/O
V
V
NC
SS
CC
3
17
16
20
22
24
27
I/O
I/O
CE
OE
A
WE
9
5
4
64K, 8K x 8 Bit
X28HC64
18
19
21
23
25
26
I/O
I/O
A
A
A
NC
10
11
8
6
7
FN8109.1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A 3
A 4
A 5
A 6
A 7
A 12
NC
NC
V CC
NC
WE
NC
A 8
A 9
A 11
OE

Related parts for X28HC64P-12

X28HC64P-12 Summary of contents

Page 1

Data Sheet 5 Volt, Byte Alterable EEPROM FEATURES • 70ns access time • Simple byte and page write —Single 5V supply —No external high voltages or V —Self-timed —No erase before write —No complex programming algorithms —No overerase problem ...

Page 2

... X28HC64SM-70 X28HC64SM-70* X28HC64S-70 Z X28HC64SZ-70 (Note) X28HC64J-90 X28HC64J-90* X28HC64JI-90 X28HC64JI-90* X28HC64JI-90 Z X28HC64JIZ-90* (Note) X28HC64KM-90 X28HC64KM-90 C X28HC64KMB-90 X28HC64KMB-90 X28HC64P-90 X28HC64P-90 X28HC64PI-90 X28HC64PI-90 X28HC64PI-90 Z X28HC64PIZ-90 (Note) X28HC64P-90 Z X28HC64PZ-90 (Note) X28HC64S-90 X28HC64S-90* 2 X28HC64 TEMPERATURE ACCESS TIME RANGE (°C) (ns) -55 to 125 LCC (458 mil PLCC - PLCC - ...

Page 3

... X28HC64J-12* X28HC64J-12 X28HC64JI-12* X28HC64JI-12 X28HC64JIZ-12* (Note) X28HC64JI-12 Z X28HC64JZ-12* (Note) X28HC64J-12 Z X28HC64KMB-12 C X28HC64KMB-12 X28HC64P-12 X28HC64P-12 X28HC64PI-12 X28HC64PI-12 X28HC64PIZ-12 (Note) X28HC64PI-12 Z X28HC64PZ-12 (Note) X28HC64P-12 Z X28HC64S-12* X28HC64S-12 X28HC64SI-12* X28HC64SI-12 X28HC64SIZ-12* (Note) X28HC64SI-12 Z X28HC64SZ-12 (Note) X28HC64S-12 Z X28HC64DM-15 X28HC64DM-15 X28HC64J-15T1 X28HC64J-15 X28HC64JI-15 X28HC64JI-15 X28HC64JM-15 X28HC64JM-15 X28HC64JZ-15* (Note) ...

Page 4

ABSOLUTE MAXIMUM RATINGS Temperature under bias X28HC64 ......................................... -10°C to +85°C X28HC64I, X28HC64M .................. -65°C to +135°C Storage temperature.......................... -65°C to +150°C Voltage on any pin with respect to V ......................................... -1V to +7V SS D.C. output current ............................................... 5mA ...

Page 5

ENDURANCE AND DATA RETENTION Parameter Minimum endurance Data retention POWER-UP TIMING Symbol (3) t Power-up to read operation PUR (3) t Power-up to write operation PUW CAPACITANCE T = +25° 1MHz Symbol Parameter (3) C Input/output ...

Page 6

A.C. CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) Read Cycle Limits Symbol Parameter t Read cycle time RC t Chip enable access time CE t Address access time AA t Output enable access time OE ( ...

Page 7

WRITE CYCLE LIMITS Symbol Parameter (5) t Write cycle time WC t Address setup time AS t Address hold time AH t Write setup time CS t Write hold time pulse width High setup ...

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