BYV26E-TR Vishay / Small Signal & Opto Products (SSP), BYV26E-TR Datasheet - Page 2

• Manufacturer Part Number: BYV26E-TR
• Description: Diode, Ultrafast; 2.5 V (Max.); 1 A IF; 1000V; 30A Ifms; 5 uA (Max.) IR; SOD-57
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of BYV26E-TR

• Current, Forward: 1 A
• Current, Reverse: 100 μA
• Current, Surge: 30 A
• Package Type: SOD-57
• Primary Type: Avalanche
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -55 to +175 °C
• Time, Recovery: 75 ns
• Voltage, Forward: 2.5 V
• Voltage, Reverse: 1000 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

BYV26
Vishay Semiconductors
Maximum Thermal Resistance
T
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2
Junction ambient
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
amb
amb
95 9728
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Reverse Power Dissipation vs. Junction
600
500
400
300
200
100
0
0
Parameter
Parameter
R
thJA
T
j
40
– Junction Temperature (° C )
= 45 K/W
R
thJA
= 100 K/W
80
Temperature
120
l = 10 mm, T
I
I
V
V
I
I
F
F
R
F
R
R
V
= 1 A
= 1 A, T
= 0.5 A, I
= 100 µA
= V
= V
R
160
= V
RRM
RRM
1000V
200V
400V
600V
800V
RRM
Test condition
Test condition
j
, T
= 175 °C
R
200
L
= 1 A, i
j
= constant
= 150 °C
R
= 0.25 A
BYV26A-
BYV26D-
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26C
BYV26E
Part
95 9729
Figure 2. Max. Reverse Current vs. Junction Temperature
Symbol
1000
R
100
thJA
10
1
Symbol
0
V
V
V
V
V
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
V
V
I
I
t
t
R
R
rr
rr
F
F
V
R
T
40
= V
j
– Junction Temperature ( °C )
RRM
1100
Min
300
500
700
900
80
Value
45
120
Typ.
160
200
Max
100
2.5
1.3
30
75
5
K/W
Unit
Unit
µA
µA
ns
ns
V
V
V
V
V
V
V