BYV26E-TR Vishay / Small Signal & Opto Products (SSP), BYV26E-TR Datasheet

no-image

BYV26E-TR

Manufacturer Part Number
BYV26E-TR
Description
Diode, Ultrafast; 2.5 V (Max.); 1 A IF; 1000V; 30A Ifms; 5 uA (Max.) IR; SOD-57
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet

Specifications of BYV26E-TR

Current, Forward
1 A
Current, Reverse
100 μA
Current, Surge
30 A
Package Type
SOD-57
Primary Type
Avalanche
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-55 to +175 °C
Time, Recovery
75 ns
Voltage, Forward
2.5 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYV26E-TR
Manufacturer:
Vishay Semiconductors
Quantity:
20 130
Part Number:
BYV26E-TR
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
BYV26E-TR
Quantity:
70 000
Ultra Fast Avalanche Sinterglass Diode
Features
Applications
Switched mode power supplies
High-frequency inverter circuits
Mechanical Data
Case: SOD-57 Sintered glass case
Parts Table
Absolute Maximum Ratings
T
• Glass passivated junction
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Part
see electrical characteristics
t
I
p
(BR)R
= 10 ms, half sinewave
= 1 A, inductive load
Test condition
V
V
V
V
V
R
R
R
R
R
= 200 V; I
= 400 V; I
= 600 V; I
= 800 V; I
= 1000 V; I
Type differentiation
FAV
FAV
FAV
FAV
e2
FAV
= 1 A
= 1 A
= 1 A
= 1 A
= 1 A
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
Part
V
V
V
V
V
T
R
R
R
R
R
Symbol
j
I
= V
= V
= V
= V
= V
I
FSM
= T
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
E
FAV
R
RRM
RRM
RRM
RRM
RRM
stg
Vishay Semiconductors
- 55 to + 175
Value
1000
200
400
600
800
30
10
Package
1
BYV26
Unit
mJ
°C
V
V
V
V
V
A
A
1

Related parts for BYV26E-TR

BYV26E-TR Summary of contents

Page 1

... FAV V = 400 FAV V = 600 FAV V = 800 FAV V = 1000 FAV Test condition Part BYV26A BYV26B BYV26C BYV26D BYV26E = 1 A, inductive load BYV26 Vishay Semiconductors Package SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Symbol Value Unit 200 V R RRM 400 V R RRM 600 V R RRM ...

Page 2

... Symbol = 175 °C j RRM , T = 150 °C RRM j BYV26A V BYV26B V BYV26C V BYV26D V BYV26E 0.25 A BYV26A BYV26C BYV26D- BYV26E 1000 RRM 200V 100 400V 600V 10 800V 1000V 1 200 0 95 9729 Figure 2. Max. Reverse Current vs. Junction Temperature Value Unit 45 K/W Min Typ. Max V 2 ...

Page 3

... Figure 5. Diode Capacitance vs. Reverse Voltage 0.1 16381 Figure 6. Diode Capacitance vs. Reverse Voltage 3.6 (0.140)max. ISO Method E 26(1.014) min. 4.0 (0.156) max. BYV26 Vishay Semiconductors MHz BYV26C 1 10 100 V - Reverse Voltage ( MHz BYV26E 1 10 100 V - Reverse Voltage ( 9538 0.82 (0.032) max. 3 ...

Related keywords