EPM2210GF256C5N Altera, EPM2210GF256C5N Datasheet - Page 54

• Manufacturer Part Number: EPM2210GF256C5N
• Description: IC MAX II CPLD 2210 LE 256-FBGA
• Manufacturer: Altera
• Series: MAX® IIr

Specifications of EPM2210GF256C5N

• Programmable Type: In System Programmable
• Delay Time Tpd(1) Max: 7.0ns
• Voltage Supply - Internal: 1.71 V ~ 1.89 V
• Number Of Logic Elements/blocks: 2210
• Number Of Macrocells: 1700
• Number Of I /o: 204
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-FBGA
• Voltage: 1.8V
• Memory Type: FLASH
• Number Of Logic Elements/cells: 2210
• Cpld Type: FLASH
• No. Of Macrocells: 1700
• No. Of I/o's: 204
• Propagation Delay: 11.2ns
• Global Clock Setup Time: 1.9ns
• Frequency: 201.1MHz
• Rohs Compliant: Yes
• Family Name: MAX II
• # Macrocells: 1700
• Frequency (max): 1.8797GHz
• Propagation Delay Time: 11.2ns
• Number Of Logic Blocks/elements: 221
• # I/os (max): 204
• Operating Supply Voltage (typ): 1.8V
• In System Programmable: Yes
• Operating Supply Voltage (min): 1.71V
• Operating Supply Voltage (max): 1.89V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 256
• Package Type: FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 544-1391; EPM2210GF256C5N

4–4
Figure 4–2. Transistor-Level Diagram of MAX II Device I/O Buffers
Figure 4–3. ESD Protection During Positive Voltage Zap
MAX II Device Handbook
n+
The CMOS output drivers in the I/O pins intrinsically provide electrostatic discharge
(ESD) protection. There are two cases to consider for ESD voltage strikes: positive
voltage zap and negative voltage zap.
A positive ESD voltage zap occurs when a positive voltage is present on an I/O pin
due to an ESD charge event. This can cause the N+ (Drain)/ P-Substrate junction of
the N-channel drain to break down and the N+ (Drain)/P-Substrate/N+ (Source)
intrinsic bipolar transistor turn on to discharge ESD current from I/O pin to GND.
The dashed line (see
positive ESD zap.
IOE Signal
p - well
I/O
n+
GND
VPAD
Figure
Source
Drain
Drain
Source
PMOS
NMOS
4–3) shows the ESD current discharge path during a
Larger of VCCIO or VPAD
p+
IOE Signal or the
Gate
Gate
Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
n - well
Hot Socketing Feature Implementation in MAX II Devices
P-Substrate
VCCIO
p+
p - substrate
N+
N+
VCCIO or VPAD
The Larger of
D
S
n+
GND
I/O
G
© October 2008 Altera Corporation
Ensures 3.3-V
Tolerance and
Hot-Socket
Protection