A3212ELHLT-T Allegro, A3212ELHLT-T Datasheet

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A3212ELHLT-T

Manufacturer Part Number
A3212ELHLT-T
Description
Manufacturer
Allegro

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Supply Voltage, V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, V
Output Current, I
Junction Temperature, T
Operating Temperature, T
Storage Temperature Range,
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
ABSOLUTE MAXIMUM RATINGS
Range 'E-' .................... -40°C to +85°C
Range 'L-' .................. -40°C to +150°C
T
S
.............................. -65°C to +170°C
Approximate actual size
Package A3212EELLT-T
2 x 2 mm MLPD
OUT
DD
.............................. 5 V
........................... 1 mA
OUT
J
A
................ +170°C
...................... 5 V
A3212
The A3212 integrated circuit is an ultra-sensitive, pole in de pen dent Hall-effect
switch with a latched digital output. This sensor is es pe cial ly suited for opera-
tion in battery-operated, hand-held equip ment such as cellular and cordless
tele phones, pagers, and palmtop com put ers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average op er at ing power requirements to less
than 15 µW with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of suf fi cient
strength will turn the output on; in the absence of a magnetic field, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic off-
set cancellation), which reduces the residual offset voltage normally caused by
device overmolding, temperature de pen den cies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator, small-sig-
nal amplifier, chopper sta bi li za tion, a latch, and a MOSFET output. Ad vanced
BiCMOS processing is used to take advantage of low-voltage and low-power
requirements, component matching, very low input-offset errors, and small com-
ponent geometries.
Four package styles provide magnetically op ti mized solutions for most ap pli -
ca tions. Miniature low-profile surface-mount package types EH and EL
(0.75 and 0.50 mm nominal height) are leadless, LH is a leaded low-profile
SMD, and UA is a three-lead SIP for through-hole mount ing. Each package is
available in a lead (Pb) free version (suffix, –T) with 100% matte tin plated lead-
frame. EL package for limited release, engineering samples available.
FEATURES
MICROPOWER, ULTRA-SENSITIVE
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Sol id-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence
HALL-EF FECT SWITCH

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