STP7NM60N STMicroelectronics, STP7NM60N Datasheet - Page 8

• Manufacturer Part Number: STP7NM60N
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP7NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 14. Normalized gate threshold voltage
Figure 16. Normalized B
Electrical characteristics
8/17
V
BV
(norm)
(norm)
GS(th)
1.00
0.80
1.10
0.70
0.99
0.97
0.90
1.01
0.95
0.93
1.07
1.05
1.03
DSS
-50
-50
vs temperature
-25
-25
0
0
25
25
I
D
=1mA
I
VDSS
D
50
50
=250µA
75
75
vs temperature
100
100
T
J
(°C)
T
Doc ID 16472 Rev 4
AM06483v1
AM06485v1
J
(°C)
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
Figure 15. Normalized on resistance vs
R
(norm)
DS(on)
1.1
0.9
0.7
0.5
1.7
1.5
1.3
2.1
1.9
-50
temperature
-25
0
25
I
D
=2.5A
50
75
100
T
J
(°C)
AM06484v1