MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 75

• Manufacturer Part Number: MT29F1G08ABADAWP:D
• Description: MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Notes:
Stresses greater than those listed can cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
guaranteed. Exposure to absolute maximum rating conditions for extended periods can
affect reliability.
Table 16: Absolute Maximum Ratings
Voltage on any pin relative to V
Table 17: Recommended Operating Conditions
Table 18: Valid Blocks
Parameter/Condition
Voltage Input
V
Storage temperature
Short circuit output current, I/Os
Parameter/Condition
Operating temperature Commercial
V
Ground supply voltage
Parameter
Valid block number
CC
CC
1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
2. Blocks 0–7 (3.3V) and blocks 0–3 (1.8V) are guaranteed to be valid with ECC when ship-
supply voltage
supply voltage
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below NVB during the endurance life of the
device. Do not erase or program blocks marked invalid by the factory.
ped from the factory.
Symbol
NVB
Industrial
3.3V
1.8V
3.3V
1.8V
3.3V
1.8V
75
SS
3.3V/1.8V
Device
Symbol
Symbol
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T
V
V
V
STG
V
–
T
CC
IN
1Gb x8, x16: NAND Flash Memory
CC
SS
A
Min
–40
2.7
1.7
0
0
1004
Min
Min
–0.6
–0.6
–0.6
–0.6
–65
–
Electrical Specifications
Typ
3.3
1.8
© 2010 Micron Technology, Inc. All rights reserved.
–
–
0
Max
1024
Max
150
4.6
2.4
4.6
2.4
5
Max
1.95
blocks
3.6
70
85
Unit
0
Unit
mA
Notes
°C
V
V
V
V
Unit
1, 2
°C
°C
V
V
V