MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 44

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MT29F1G08ABADAWP:D

Manufacturer Part Number
MT29F1G08ABADAWP:D
Description
MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F1G08ABADAWP:D

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 12: Feature Addresses 80h: Programmable I/O Drive Strength
Table 13: Feature Addresses 81h: Programmable R/B# Pull-Down Strength
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Subfeature
Parameter
P1
I/O drive strength
P2
P3
P4
Subfeature
Parameter
P1
R/B# pull-down
strength
P2
P3
P4
Options
Full (default)
Three-quarters
One-half
One-quarter
Options
Full (default)
Three-quarters
One-half
One-quarter
Note:
Note:
1. The programmable drive strength feature address is used to change the default I/O
1. This feature address is used to change the default R/B# pull-down strength. Its strength
drive strength. Drive strength should be selected based on expected loading of the mem-
ory bus. This table shows the four supported output drive strength settings. The default
drive strength is full strength. The device returns to the default drive strength mode
when the device is power cycled. AC timing parameters may need to be relaxed if I/O
drive strength is not set to full.
should be selected based on the expected loading of R/B#. Full strength is the default,
power-on value.
I/O7
I/O7
I/O6
I/O6
Reserved (0)
Reserved (0)
Reserved (0)
I/O5
I/O5
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
44
I/O4
I/O4
Reserved (0)
Reserved (0)
Reserved (0)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
I/O3
I/O3
I/O2
I/O2
I/O1
I/O1
0
0
1
1
0
0
1
1
Feature Operations
© 2010 Micron Technology, Inc. All rights reserved.
I/O0
I/O0
0
1
0
1
0
1
0
1
Value
Value
00h
01h
02h
03h
00h
00h
00h
00h
01h
02h
03h
00h
00h
00h
Notes
Notes
1
1

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