IPI12CN10NG Infineon Technologies, IPI12CN10NG Datasheet - Page 7

• Manufacturer Part Number: IPI12CN10NG
• Description: SP000208928_N-KANAL POWER MOS_TU_RO
• Manufacturer: Infineon Technologies

Rev. 1.02
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
115
110
105
100
10
95
90
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
IPB12CN10N G
D
=67 A pulsed
IPI12CN10N G
g s
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
30
g d
IPD12CN10N G
IPP12CN10N G
20 V
40
2006-06-02
80 V
Q
50 V
gate
50