IPI12CN10NG Infineon Technologies, IPI12CN10NG Datasheet - Page 6

• Manufacturer Part Number: IPI12CN10NG
• Description: SP000208928_N-KANAL POWER MOS_TU_RO
• Manufacturer: Infineon Technologies

Rev. 1.05
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
30
25
20
15
10
DS
=f(T
5
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=67 A; V
20
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
IPB12CN10N G
IPI12CN10N G
=V
0.5
DS
20
83 µA
175 °C
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
830 µA
100
IPD12CN10N G
IPP12CN10N G
1.5
25 °C
175 °C, 98%
140
2008-06-23
180
2