BCW32T/R NXP Semiconductors, BCW32T/R Datasheet - Page 3

• Manufacturer Part Number: BCW32T/R
• Description: Trans GP BJT NPN 32V 0.1A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BCW32T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.75(Typ)@0.5mA@10mA|0.85(Typ)@2.5mA@50mA V
• Maximum Collector Emitter Saturation Voltage: 0.25@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 32 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Feb 06
R
I
I
h
V
V
V
C
f
F
j
CBO
EBO
T
FE
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
th(j-a)
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
R
E
E
C
C
C
C
C
C
C
C
E
C
C
S
= 0; V
= 0; V
= I
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
e
= 0; V
CB
CB
EB
3
CONDITIONS
= 32 V
= 32 V; T
= 5 V
CE
CE
CB
B
B
B
B
CE
CE
CE
= 0.5 mA
= 2.5 mA
= 0.5 mA
= 2.5 mA
= 5 V
= 5 V
= 10 V; f = 1 MHz −
= 5 V
= 5 V;
= 5 V;
note 1
CONDITIONS
j
= 100 °C
BCW31; BCW32; BCW33
−
−
−
−
−
−
110
200
420
−
−
−
−
550
100
−
MIN.
VALUE
500
−
−
−
190
330
600
−
−
−
120
210
750
850
−
2.5
−
−
TYP.
Product data sheet
100
10
100
−
−
−
220
450
800
250
−
−
−
700
−
−
10
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
UNIT