M25PX32-VMW6E NUMONYX, M25PX32-VMW6E Datasheet - Page 52

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M25PX32-VMW6E

Manufacturer Part Number
M25PX32-VMW6E
Description
Flash Mem Serial-SPI 3V/3.3V 32M-Bit 4M x 8 8ns Tube
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX32-VMW6E

Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
4KByte x 1024
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Maximum rating
Stressing the device outside the ratings listed in
cause permanent damage to the device. These are stress ratings only, and operation of the
device at these, or any other conditions outside those indicated in the operating sections of
this specification, is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 12.
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), and the European
2. Avoid applying VPPH to the W/VPP pin during Bulk Erase.
3. JEDEC Std JESD22-A114A (C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω).
Symbol
directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
T
T
V
V
V
V
LEAD
STG
ESD
CC
PP
IO
Absolute maximum ratings
Storage temperature
Lead temperature during soldering
Input and output voltage (with respect to ground)
Supply voltage
Fast Program/Erase voltage
Electrostatic discharge voltage (Human Body model)
Parameter
(2)
Table 12: Absolute maximum ratings
(3)
–2000
–0.6
–0.6
–0.2
Min
–65
V
see
CC
2000
Max
10.0
150
4.0
+0.6
(1)
may
Unit
°C
°C
V
V
V
V

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