M25PX32-VMW6E NUMONYX, M25PX32-VMW6E Datasheet - Page 19

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M25PX32-VMW6E

Manufacturer Part Number
M25PX32-VMW6E
Description
Flash Mem Serial-SPI 3V/3.3V 32M-Bit 4M x 8 8ns Tube
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX32-VMW6E

Density
32 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
4KByte x 1024
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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5
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Subsector, Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Figure 8.
HOLD
W/V
DQ0
DQ1
4 194 304 bytes (8 bits each)
1024 subsectors (4 Kbytes each)
64 sectors (64 Kbytes each)
16384 pages (256 bytes each)
64 OTP bytes located outside the main memory array
PP
C
S
Block diagram
Address Register
Control Logic
and Counter
00000h
I/O Shift Register
256 Bytes (Page Size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
3FFFFFh
000FFh
64 OTP bytes
Register
Status
Configurable OTP
memory array
area in main
AI13722
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