MT48H16M32LFCM-75:A Micron Technology Inc, MT48H16M32LFCM-75:A Datasheet - Page 80
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MT48H16M32LFCM-75:A
Manufacturer Part Number
MT48H16M32LFCM-75:A
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M32LFCM-75A.pdf
(86 pages)
Specifications of MT48H16M32LFCM-75:A
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
95mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H16M32LFCM-75:A
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT48H16M32LFCM-75:A TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Power-Down
Figure 49: Power-Down Mode
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
Precharge all
active banks
DQM
CKE
CLK
A10
DQ
High-Z
t CMS
t CKS
PRECHARGE
t AS
Single bank
All banks
Bank(s)
T0
t CMH
t CKH
t AH
Note:
Two clock cycles
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is
a row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting
All banks idle, enter
power-down mode
t CK
1. Violating refresh requirements during power-down may result in a loss of data.
T1
NOP
t CL
t CKS
T2
NOP
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
t CH
Input buffers gated off
while in power-down mode
80
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Exit power-down mode
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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t
CKS).
t CKS
Tn + 1
NOP
All banks idle
© 2007 Micron Technology, Inc. All rights reserved.
Tn + 2
Power-Down
ACTIVE
Row
Bank
Row
Don’t Care