MT48H16M32LFCM-75:A Micron Technology Inc, MT48H16M32LFCM-75:A Datasheet - Page 63

• Manufacturer Part Number: MT48H16M32LFCM-75:A
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-75:A

• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 95mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 34: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
T2
Bank
D
t CMH
IN
t DH
t CH
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T3
NOP
63
t DS
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
t DH
t DS
T5
NOP
D
IN
t DH
© 2007 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care