BTS660PNK Infineon Technologies, BTS660PNK Datasheet - Page 10

• Manufacturer Part Number: BTS660PNK
• Manufacturer: Infineon Technologies

Specifications of BTS660PNK

• Switch Type: High Side
• Power Switch Family: BTS660
• Power Switch On Resistance: 7.2mOhm
• Output Current: 38A
• Number Of Outputs: Single
• Mounting: Through Hole
• Supply Current: 800uA
• Package Type: TO-220
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 7 +Tab
• Power Dissipation: 170W
• Lead Free Status / Rohs Status: Not Compliant

Inverse load current operation
The device is specified for inverse load current
operation (V
feature is not available during this kind of operation (I
= 0). With I
drain source diode is conducting resulting in consi-
derably increased power dissipation. If the device is
switched on (V
decreased to the much lower value R
(specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L
Infineon Technologies AG
+
-
E
V bb
AS
=
E
E
I
V
IN
V
bb
2
AS
I
bb
L
IN
IN
·
R
·
OUT
= E
L
L
= 0 (e.g. input open) only the intrinsic
(
IN
V
bb
> V
= 0), this power dissipation is
bb
IN
+ E
+ |V
bb
E
IN
V
L
L
IS
> 0V). The current sense
PROFET
- E
OUT(CL)
=
IS
V
1 /
R
PROFET
bb
2
= V
·
R IS
V
IS
bb
L
|)
·
I
R
IS
I
ON(CL)
OUT
2
L
ln
IS
(1+
OUT
E AS
ON(INV)
Z L
0 :
·
{
|V
i
i (t)
L
L
(t) dt,
OUT(CL)
R L
I
L
L
V
·
* I
- I
R
OUT
2
L
L
E
Page 10
E
|
E Load
R
)
L
+
-
IS
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C, V bb = 40 V, R L = 0
L [µH]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
R
the short circuit current is defined by I
device is shut down after t
IN
Signal
V
*C
10000
V
1000
T1 will be reset. The device is turned on again,
100
10
Signal
GND
1
R
10
V
T1
V bb
S
*R
IS
. After a delay time defined by
IN
C
V
Data Sheet BTS660P
d(SC)
PROFET
100
T2
V bb
with latch function.
OUT
L(SC)
IS
R
2003-Oct-01
IS
and the
R
Power
GND
1000
load
I [A]