K4S561633CRL75000 Samsung Semiconductor, K4S561633CRL75000 Datasheet - Page 7

• Manufacturer Part Number: K4S561633CRL75000
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S561633CRL75000

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 7/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3V
• Package Type: CSP
• Operating Temp Range: -25C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2.7V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

K4S561633C-R(B)L/N/P
AC CHARACTERISTICS
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
Note :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of
a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea
repeater use.
Parameter
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
CAS latency=3
CAS latency=2
CAS latency=1
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
SAC
t
t
t
t
SHZ
SLZ
O H
C C
C H
C L
SS
SH
Min
7.5
9.5
2.5
2.5
2.5
2.5
2.0
1.0
1
-
-
- 75
1000
Max
5.4
5.4
7
7
-
-
Min
9.5
9.5
2.5
2.5
2.5
1.5
3
3
1
-
-
-1H
1000
Max
7
7
7
7
-
-
Min
9.5
2.5
2.5
2.5
2.5
1.5
12
25
3
3
1
-1L
CMOS SDRAM
1000
Max
Rev. 1.4 Dec. 2002
20
20
7
8
7
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2