MT47H256M8THN-3:H Micron Technology Inc, MT47H256M8THN-3:H Datasheet - Page 7

• Manufacturer Part Number: MT47H256M8THN-3:H
• Description: IC SDRAM 2GBIT 667MHZ 63FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8THN-3:H

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 63-TFBGA
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 5:
Table 6:
Figure 4:
PDF: 09005aef83fa94e3/Source: 09005aef8266ac6e
2Gb_twindie_H.fm - Rev. B 7/10 EN
Rev
Die
H
Symbol
T
T
STG
C
Package
63-ball
Temperature Limits
Thermal Impedance
Temperature Test Point Location
Parameter
Storage temperature
Operating temperature – commercial
Notes:
Notes:
Substrate
2-layer
4-layer
1. Maximum storage case temperature; T
2. Maximum operating case temperature; T
3. Device functionality is not guaranteed if the device exceeds maximum T
1. Thermal resistance data is based on a number of samples from multiple lots and should be
Test point
shown in Figure 4. This case temperature limit is allowed to be exceeded briefly during
package reflow, as noted in technical note
ters,” available on Micron’s Web site.
shown in Figure 4.
viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
71.8
54.1
Lmm x Wmm FBGA
Airflow = 1m/s
θ JA (°C/W)
Width (W)
54.3
44.8
7
0.5 (W)
Min
–55
0
Airflow = 2m/s θ JB (°C/W) θ JC (°C/W)
STG
Micron Technology, Inc., reserves the right to change products or specifications without notice.
θ JA (°C/W)
C
0.5 (L)
is measured in the center of the package, as
is measured in the center of the package, as
48.3
41.3
TN-00-15: “Recommended Soldering Parame-
2Gb: x4, x8 TwinDie DDR2 SDRAM
Length (L)
Max
150
85
Electrical Specifications
35.3
34.9
©2010 Micron Technology, Inc. All rights reserved.
Units
°C
°C
C
5.5
during operation.
Notes
2, 3
1
Notes
1