BAT18 NXP Semiconductors, BAT18 Datasheet - Page 2

• Manufacturer Part Number: BAT18
• Description: Planar high-performance band-switching diode in a small rectangular SOT23 SMD plastic package
• Manufacturer: NXP Semiconductors
• Type: Switchr

Specifications of BAT18

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.2V
• Operating Temperature Classification: Military
• Reverse Voltage: 35V
• Package Type: SOT-23
• Mounting: Surface Mount
• Maximum Series Resistance @ Maximum If: 0.7@5mAOhm
• Operating Temperature (max): 125C
• Pin Count: 3
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 13385
Product data sheet
Table 3:
[1]
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5:
T
[1]
Table 6:
Type number
BAT18
Symbol
V
I
T
T
Symbol
R
R
Symbol Parameter
V
I
C
r
F
R
D
j
stg
j
R
F
th(j-tp)
th(j-a)
d
= 25 C unless otherwise specified.
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
Device mounted on a FR4 printed-circuit board.
forward voltage
reverse current
diode capacitance V
diode forward
resistance
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Marking
Limiting values
Thermal characteristics
Electrical characteristics
Parameter
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
Rev. 02 — 31 August 2004
Conditions
I
see
I
F
F
R
= 100 mA; see
V
V
= 5 mA; f = 200 MHz; see
= 20 V; f = 1 MHz; see
R
R
Figure 2
= 20 V
= 20 V; T
Marking code
10*
Conditions
j
= 60 C
Figure 1
[1]
Conditions
Figure 3
Figure 4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
55
Min
-
-
-
-
-
Silicon planar diode
Max
35
100
+125
125
Typ
-
-
-
0.8
0.5
[1]
BAT18
Typ
330
500
Max Unit
1.2
100
1
1.0
0.7
Unit
V
mA
C
C
Unit
K/W
K/W
V
nA
pF
2 of 7
A