MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 132

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MT29F8G08ABABAWP-IT:B

Manufacturer Part Number
MT29F8G08ABABAWP-IT:B
Description
MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08ABABAWP-IT:B

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Figure 95:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
WE#
WE#
R/B#
R/B#
I/Ox
I/Ox
CE#
ALE
RE#
CE#
ALE
RE#
CLE
CLE
t DS
Column address 0
t DH
t CS
t RC
DOUT
t CLS
0
t REA
00h
Page address
DOUT
READ PAGE CACHE SEQUENTIAL
1
M
t CH
t CLH
Column address
add 1
t WC
1
Col
DOUT
00h
t RHW
t DS
add 2
Col
t CLS
t CS
31h
add 1
t CLH
Row
t WB
Page address
t CH
t DH
add 2
t CEA
Row
t RCBSY
M
t RR
Micron Confidential and Proprietary
add 3
Row
Column address 0
t WB
DOUT
8Gb Asychronous/Synchronous NAND Flash Memory
t RC
0
t REA
30h
Page address
DOUT
1
M + 1
132
t R
DOUT
t RHW
Micron Technology, Inc., reserves the right to change products or specifications without notice.
31h
3Fh
t RCBSY
t RCBSY
Column address 0
t CEA
t RR
Column address 0
DOUT
t RC
DOUT
0
0
t REA
Page address
Page address
DOUT
©2008 Micron Technology, Inc. All rights reserved.
DOUT
1
M + 2
1
M
Timing Diagrams
Don’t Care
1
DOUT
DOUT
t RHW
t DS
t CLS
t CS
31h
Advance
t CLH
t WB
t CH
t DH

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