MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 113

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 73:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
W/R#
DQx
R/B#
DQS
CLK
CE#
CLE
ALE
t CAD x 4
Read Access B
Random
1
31h
t WB
READ PAGE CACHE RANDOM (2 of 2)
t RCBSY
t DQSD
t DQSCK
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
Data
Read Data A
Random
Output
t DQSHZ
113
t RHW
3Fh
t WB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RCBSY
t DQSD
©2008 Micron Technology, Inc. All rights reserved.
t DQSCK
Timing Diagrams
Don’t Care
Read Data B
Data
Random
Output
t DQSHZ
t RHW
Advance
Driven