2N6427 NXP Semiconductors, 2N6427 Datasheet - Page 2

• Manufacturer Part Number: 2N6427
• Manufacturer: NXP Semiconductors

Specifications of 2N6427

• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 2@0.5mA@500mAV
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package.
QUICK REFERENCE DATA
1997 Jul 04
V
V
I
P
h
f
SYMBOL
C
T
FE
High current (max. 500 mA)
Low voltage (max. 30 V)
High DC current gain (min. 10000).
General purpose
High gain amplification.
CBO
CES
tot
NPN Darlington transistor
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
DC current gain
transition frequency
PARAMETER
open emitter
V
T
I
I
C
C
amb
BE
= 10 mA; V
= 10 mA; V
= 0
25 C
CONDITIONS
CE
CE
2
= 5 V; f = 100 MHz
= 5 V
PINNING
handbook, halfpage
PIN
Fig.1
1
2
3
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
collector
base
emitter
10000
125
MIN.
MAM252
DESCRIPTION
Product specification
40
30
500
625
100000
MAX.
2
TR1
2N6427
V
V
mA
mW
MHz
TR2
1
3
UNIT