BSP51E6327XT Infineon Technologies, BSP51E6327XT Datasheet

Page 1

NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 - BSP52 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BSP50 BSP50 BSP51 BSP51 BSP52 BSP52 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BSP50 mA BSP51 C B ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency I = 100 mA 100 MHz C CE Tum-on time I = 500 mA 0 Tum-off time ...

Page 4

Switching time test circuit Switching time waveform 4 BSP50-BSP52 2007-03-30 ...

Page 5

DC current gain BSP 50... Base-emitter saturation voltage ...

Page 6

Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BSP 50...52 3 ...

Page 7

Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...