IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet - Page 3

• Manufacturer Part Number: IKW40T120XK
• Manufacturer: Infineon Technologies

Specifications of IKW40T120XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Power Semiconductors
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
V
I
I
g
R
Symbol
C E S
G E S
f s
( B R ) C E S
C E ( s a t )
F
G E ( t h )
t h J C
t h J C D
t h J A
G i n t
TrenchStop
3
V
V
T
T
T
V
T
T
T
I
V
V
T
T
V
V
C
j
j
j
j
j
j
j
j
G E
G E
G E
C E
G E
C E
C E
= 25 C
= 125 C
= 150 C
= 25 C
= 125 C
= 150 C
=1.5mA,V
= 25 C
= 150 C
= 0 V , I
= 0 V , I
= 12 00 V
= 0 V
=0 V , V
=20V, I
= 15 V, I
Conditions
Conditions
®
G E
C
F
Series
= 4 0 A
=1.5mA
C
,
C E
=20V
=40A
C
=40A
=V
G E
1200
min.
5.0
-
-
-
-
-
-
-
-
-
-
Max. Value
IKW40T120
Value
0.45
0.81
1.75
1.75
1.75
typ.
1.8
2.1
2.3
5.8
40
21
6
-
-
-
-
Rev. 2.2
max.
600
2.3
2.3
6.5
0.4
4.0
-
-
-
-
-
-
Sep 08
Unit
K/W
Unit
V
mA
nA
S
Ω